| 摘要 |
PROBLEM TO BE SOLVED: To provide an SDD of which a substrate (I layer) of a semiconductor can be thicker, and a semiconductor of high resistivity can be used, and is capable of detecting high energy X ray and detecting X ray for a long part and wide area. SOLUTION: Relating to a radiation detector, a P layers 10 is provided on the first surface of an I layer 11. An island-like N layer 12 is provided on the second surface of the I layer 11, with an annular P ring 13 formed with the N layer 12 as a center. The electric charges generated at the I layer 11 by incident radiation are collected at the N layer 12 by potential gradient generated by the voltage applied to the P layer 10 and the P ring 13. The P layer 10 is provided with a first electrode terminal 21 for applying a voltage. One of the P rings 13 provided to such position as faces the outer peripheral part of the P layer 10, is provided with a second electrode terminal 14 for applying a voltage. No terminal for applying a voltage is provided between the P ring 13 on the second surface and the N layer 12. COPYRIGHT: (C)2009,JPO&INPIT
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