| 摘要 |
A ferroelectric capacitor is formed above a semiconductor substrate ( 1 ), and thereafter, wirings ( 24 a) are formed. A barrier film ( 25 ) covering the wirings ( 24 a) is formed. A silicon oxide film ( 26 ) embedding gaps between the adjacent wirings ( 24 a) is formed. The silicon oxide film ( 26 ) is polished until a surface of the barrier film ( 25 ) is exposed by a CMP method. A barrier film ( 27 ) is formed on the barrier film ( 25 ) and the silicon oxide film ( 26 ). Aluminum oxide films are formed as the barrier films ( 25, 27 ). |
