发明名称 |
A NOVEL FABRICATION TECHNIQUE FOR HIGH FREQUENCY, HIGH POWER GROUP III NITRIDE ELECTRONIC DEVICES |
摘要 |
<p>Fabrication methods of a high frequency (sub-micron gate length) operation of AlInGaN/InGaN/GaN MOS-DHFET, and the HFET device resulting from the fabrication methods, are generally disclosed. The method of forming the HFET device generally includes a novel double-recess etching and a pulsed deposition of an ultra-thin, high-quality silicon dioxide layer as the active gate-insulator. The methods of the present invention can be utilized to form any suitable field effect transistor (FET), and are particular suited for forming high electron mobility transistors (HEMT).</p> |
申请公布号 |
WO2008127469(A2) |
申请公布日期 |
2008.10.23 |
申请号 |
WO2007US87755 |
申请日期 |
2007.12.17 |
申请人 |
UNIVERSITY OF SOUTH CAROLINA;KHAN, M. ASIF;ADIVARAHAN, VINOD |
发明人 |
KHAN, M. ASIF;ADIVARAHAN, VINOD |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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