| 摘要 |
An apparatus for doping catalyst metal for crystallizing low-temperature polysilicon is provided to form an electric field with a partially high density by forming a protrusion part on a target surface of a sputter gun. A substrate is placed on a confronting electrode plate(5) installed in a chamber(1). A sputter gun(9) of a non-magnetron type performs a doping process on a metal catalyst material while transferring over a substrate, disposed to correspond to the confronting electrode plate. Linear driving parts(7) linearly transfer the sputter gun, disposed at both sides of the confronting electrode plate. A unit for forming an electric field of a partially high density is formed at one side of the sputter gun. The sputter gun can include a pair of support units installed on a belt, an electrode formed between the pair of support units, and an electrode plate coupled to the electrode wherein the electrode plate is disposed in a direction facing the confronting electrode plate.
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