SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving coverage property and shorten the time of data processing of a wiring pattern even when a via hole whose aspect ratio exceeds 1 is formed in an insulating film and a film for flattening on an insulating film in a multilayer film wiring structure. SOLUTION: The semiconductor device provided with a first metal wiring 15 in a layer shape on an inter-layer insulating film 13 formed on a semiconductor substrate 10 is provided with a dummy pattern 12 in only a place opposed a lower-layer insulating film 16, an SOG film 17, and a via hole 19a bored in an upper-layer insulating film 18 in a region except a gate electrode wiring 11 on the semiconductor device 10. COPYRIGHT: (C)2009,JPO&INPIT