| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device with a structure having an excellent heat dissipation property. <P>SOLUTION: A SOI substrate 2 where a semiconductor layer 5 is formed through a silicon oxide film 4 on a silicon substrate 3, is divided into a semiconductor layer 5 and an element formation region 5a by an element isolation region 6. A through hole penetrating the silicon substrate 3 from an upper side of the silicon substrate to its backside, is formed in periphery of the element isolation region 6 surrounding the element formation region 5a, and a conductor is embedded to obtain an embedded conductor 9. Therefore a passage, in which heat is dissipated through the element isolation region 6 and the embedded conductor 9 by the semiconductor device formed in the element formation region 5a from the backside, is formed. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
