OPTIMAL CORRECTION FOR THERMAL DEFORMATION OF WAFER IN LITHOGRAPHY PROCESSING

摘要

PROBLEM TO BE SOLVED: To correct thermal inductive deformation of a wafer substrate in a lithography device. SOLUTION: A correction method includes a stage P204 where a pattern is exposed on a plurality of fields of a substrate according to prespecified exposure information P204 and stages P206 and P208 where properties of fields are measured and deformations of fields induced by thermal effect of exposure processing are evaluated. The present method further includes a stage to determine correction information based on measured properties and stage P210 where the prespecified exposure information is adjusted based on the correction information to compensate thermal inductive field deformation. COPYRIGHT: (C)2009,JPO&INPIT