MAGNETRON SPUTTERING APPARATUS

摘要

A magnetron sputtering apparatus enabling an increase of the film-forming rate by increasing the instantaneous plasma density over a target. The magnetron sputtering apparatus comprises a substrate to be processed, a target opposed to a substrate to be processed and a rotary magnet disposed on the opposite side of the target to the substrate to be processed. Over the surface of the target, plasma loops are formed. The plasma loops are formed along the axis of the rotary magnet, moved, and made extinct when the rotary magnet rotates.