METHOD FOR FOMRMING HARDMASK AND METHOD FOR FORMING PATTERN USING THE SAME IN SEMICONDUCTOR DEVICE

摘要

A method for forming a hard mask of a semiconductor device is provided to easily etch an etch target layer while simplifying a fabricating process and reducing fabricating cost by using as a hard mask a carbon layer formed by a spin coating method wherein the etch selectivity of the carbon layer is increased by a plasma treatment. A material layer for a hard mask(21A) containing carbon is formed on an etch target layer(20) by a spin coating process. A plasma treatment is performed to form polymer on the material layer for the hard mask while the material layer for the hard mask is hardened. An electron beam curing process can be performed to harden the material layer for the hard mask. In the plasma treatment, CF-based gas causing polymer and inert gas for the electron beam curing process can be used.