ELECTRON BLOCKING LAYERS FOR ELECTRONIC DEVICES

摘要

Methods and apparatus for electronic devices such as non-volatile memory devices are described. The momory devices include a multi-layer control dielectric, such as a double or triple layer. The multi-layer control electric includes a combination of high-k dielectric meterials such as aluminium oxide (A1₂O₃), Hafnium oxide (HfO₂), and/or hybrid films of Hafnium aluminium oxide. The multi-layer control dielectric provides enhanced characteristics, including increased charge retention, enhanced memory program/erase window, improved reliability and stability, with feasibility for single or multistate (e.g, two, three or four bit) operation.