METHOD OF FORMING THIN FILM TRANSISTOR

摘要

A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a source/drain is provided. The gate is disposed over a substrate and includes at least one molybdenum-niobium alloy nitride layer. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source/drain is disposed over the semiconductor layer.