发明名称 METHOD FOR FORMING BUMPS ON UNDER BUMP METALLURGY
摘要 A method for forming metal bumps is provided. A bonding pad is first formed on the active surface of a chip and then a passivation layer is formed on the active surface of the chip and exposes the bonding pad. An under bump metallurgy is formed on the active surface of the chip to overlay the bonding pad. A layer of patterned photoresist is formed on the under bump metallurgy and exposes the portion of the under bump metallurgy on the bonding pad. A layer of copper is plated on the exposed portion of the under bump metallurgy and then a layer of solder is printed on the copper layer. Afterward the solder is reflowed to form a spherical metal bump. Finally, the photoresist layer is removed and the exposed portion of the under bump metallurgy is etched out.
申请公布号 US2008261390(A1) 申请公布日期 2008.10.23
申请号 US20080104712 申请日期 2008.04.17
申请人 ADVANCED SEMICONDUCTOR ENGINEERING INC. 发明人 CHEN CHIEN FAN;HUANG MIN LUNG
分类号 H01L21/44 主分类号 H01L21/44
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