| 摘要 |
A ferroelectric memory that stores information by using a hysteresis characteristic of a ferroelectric, has a semiconductor substrate; a lower electrode formed above said semiconductor substrate; a ferroelectric film formed on said lower electrode; and an upper electrode formed on said ferroelectric film, wherein said upper electrode includes an AO<SUB>x</SUB>-type conductive oxide film formed on said ferroelectric film and an "A" metal film formed on said AO<SUB>x</SUB>-type conductive oxide film, and said "A" metal is a noble metal selected from among Ir, Ru, Rh, Pt, Os and Pd.
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