发明名称 |
Semiconductor Device and Method of Fabricating the Same |
摘要 |
Disclosed is a semiconductor device. The semiconductor device includes a first type nitride-based cladding layer formed on a growth substrate having an insulating property, a multi quantum well nitride-based active layer formed on the first type nitride-based cladding layer and a second type nitride-based cladding layer, which is different from the first type nitride-based cladding layer and is formed on the multi quantum well nitride-based active layer. A tunnel junction layer is formed between the undoped buffering nitride-based layer and the first type nitride-based cladding layer or/and formed on the second type nitride-based cladding layer.
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申请公布号 |
US2008258133(A1) |
申请公布日期 |
2008.10.23 |
申请号 |
US20060092017 |
申请日期 |
2006.10.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEONG TAE-YEON |
分类号 |
H01L31/20;H01L29/12;H01L33/06;H01L33/12;H01L33/14;H01L33/32;H01L33/42 |
主分类号 |
H01L31/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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