INTEGRATED SENSOR ELEMENT THAT PRODUCES A PLASMON- POLARITON RESONANCE EFFECT

摘要

The invention relates to an integrated sensor element (10) which is produced in CMOS technology and comprises a pixel sensor (14) and a metal structure (16; 34-1) and produces a plasmon polariton resonance effect in response to electromagnetic radiation (12) in a predetermined transmission wavelength range, the metal structure (16; 34-1) being structured in a CMOS metal layer. The pixel sensor (14) and the metal structure (16; 34-1) are integrated on a common semiconductor substrate (30) so that owing to the plasmon-polariton resonance effect there is greater transmission through the metal structure (16; 34-1) to the pixel sensor for the transmission wavelength range then for wavelengths close to the transmission wavelength range.