摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ZnO vapor deposition material to be used for forming a film having high electroconductivity close to that of an ITO film at a high speed. <P>SOLUTION: The ZnO vapor deposition material to be used for forming a transparent electroconductive film is formed of a pellet which contains ZnO as a main component, Y and one or more elements selected from the group consisting of B, Al, Ga and Sc. The content proportion of Y is higher than that of the one or more elements selected from the group consisting of B, Al, Ga and Sc. The content proportion of Y is in a range of 0.1 to 14.9 mass%, and the content proportion of the one or more elements selected from the group consisting of B, Al, Ga and Sc is in a range of 0.1 to 10 mass%. <P>COPYRIGHT: (C)2009,JPO&INPIT |