摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ZnO vapor deposition material to be used for forming a film having high electroconductivity close to that of an ITO film at a high speed. <P>SOLUTION: The ZnO vapor deposition material to be used for forming a transparent electroconductive film is formed of a pellet which contains ZnO as a main component and both of a first element and a second element. The first element is one or more elements selected from the group consisting of Pr, Nd, Pm and Sm, and the second element is one or more elements selected from the group consisting of B, Al, Ga and Sc. The content proportion of the first element is higher than that of the second element. The content proportion of the first element is in a range of 0.1 to 14.9 mass%, and the content proportion of the second element is in a range of 0.1 to 10 mass%. <P>COPYRIGHT: (C)2009,JPO&INPIT |