| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which reduces crystal defects of an insulating film by a low-temperature process without requiring a large-scale apparatus. SOLUTION: A top-gate thin film transistor is manufactured by sequentially laminating, on a substrate 11, a semiconductor layer 13, a gate insulating film 14, and a gate electrode 15. In this case, after the gate insulating film 14 is formed by an application method, energy beam E is radiated. Accordingly, the semiconductor layer 13 absorbs the energy beam E, and the gate insulating film 14 is heated. COPYRIGHT: (C)2009,JPO&INPIT
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