| 摘要 |
PROBLEM TO BE SOLVED: To provide a method which simply manufactures a crystal semiconductor layer that a concentration of a catalyst element to promote crystallization is low. SOLUTION: The crystal semiconductor layer manufacturing method includes: a process which prepares a semiconductor layer (110) having a first area and second area; a process which provides the catalyst element to promote crystallization for the first area of the semiconductor layer (110); a process which carries out the heat annealing treatment for the semiconductor layer (110); a process which moves at least a part of the catalyst element from the first area to second area of the semiconductor layer (110); and a process which removes at least a part of the second area of the semiconductor layer (110). COPYRIGHT: (C)2009,JPO&INPIT
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