发明名称 DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To prevent reduction of power of output light through spatial hole burning (carrier density decrease) caused in aλ/4 phase shift DFB laser. SOLUTION: Theλ/4 phase shift DFB laser includes: an active layer 40 for generating stimulated emission light; a diffraction grating layer 30 formed on or under the active layer 40 for attaining a single longitudinal mode; and upper clad layers 41 and 41a and a lower clad layer 21 laminated with the active layer 40 and the diffraction grating layer 30 in between from the upper and lower directions. In the diffraction grating layer 30, a diffraction grating formation region 31, in which an uneven diffraction grating 33 is formed, and a diffraction grating non-formation region 32, in which the diffraction grating 33 is not formed, are formed by turns periodically in a range affected by an evanescent field of the stimulated emission light, which is subjected to wave guide in the active layer 40. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008258453(A) 申请公布日期 2008.10.23
申请号 JP20070099980 申请日期 2007.04.06
申请人 OKI ELECTRIC IND CO LTD 发明人 MIYAMURA SATOSHI
分类号 H01S5/12 主分类号 H01S5/12
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