| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor, along with its manufacturing method and a display unit, capable of increasing on/off ratio. SOLUTION: In the thin film transistor, a gate electrode 3, a gate insulting film 4, a channel layer 5, and source-drain layers 7 and 8 are stacked in this order or in the order opposite to it, on a substrate 2. The source-drain layers 7 and 8 contain impurities, having such concentration gradient as becomes lower as advances toward the channel layer 5. COPYRIGHT: (C)2009,JPO&INPIT
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