发明名称 |
MASK FOR VAPOR DEPOSITION, METHOD FOR PRODUCING VAPOR-DEPOSITION PATTERN USING THE SAME, METHOD FOR PRODUCING SAMPLE OF SEMICONDUCTOR WAFER FOR EVALUATION, METHOD FOR EVALUATING SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER |
摘要 |
PROBLEM TO BE SOLVED: To provide a means for easily evaluating electric characteristics of a semiconductor wafer with high accuracy. SOLUTION: A mask for vapor deposition used for forming a vapor-deposition pattern on the surface to be vapor-deposited has at least one opening, and comprises a resin substrate with a thickness of 20μm or less and an adhesive layer formed on one surface of the substrate. A method of producing the vapor-deposition pattern comprises the steps of: bonding the mask for vapor deposition to the surface to be vapor-deposited, through the adhesive layer of the mask for vapor deposition; and subjecting the surface to be vapor-deposited to vapor deposition treatment. A method for producing a sample for evaluating a semiconductor wafer includes using the above mask. A method for evaluating the semiconductor wafer comprises the steps of: producing a metal pattern on the surface of the semiconductor wafer with the above method; and measuring electric characteristics of the semiconductor wafer through the produced metal pattern. The method of manufacturing the semiconductor wafer includes using the above evaluation method. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2008255433(A) |
申请公布日期 |
2008.10.23 |
申请号 |
JP20070100094 |
申请日期 |
2007.04.06 |
申请人 |
SUMCO CORP |
发明人 |
MIYAZAKI SUMIO |
分类号 |
C23C14/04;C23C14/24;H01L21/285;H01L21/66 |
主分类号 |
C23C14/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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