发明名称 SINGLE CRYSTAL GROWTH APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a single crystal growth apparatus using Czochralski method in which pulling speed is increased by using a cooling body and water leakage from the cooling body is accurately detected. SOLUTION: The cooling body 10 inside of which cooling water runs surrounds a single crystal. A first flow meter 17 detects a flow rate L1 of cooling water going into the cooling body 10. A second flow meter 18 detects the flow rate L2 of cooling water coming out from the cooling body 10. A pressure gauge 12 detects the pressure P in the oven. A flow rate differentialΔL is calculated from the incoming flow rate L1 and the outgoing flow rate L2. A pressure differentialΔP is calculated from the pressure P. Determination is made that water leakage occurs, when both the flow rate differentialΔL and the pressure differentialΔP exceed threshold valuesΔLB andΔPB approximately at the same time. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008254982(A) 申请公布日期 2008.10.23
申请号 JP20070100911 申请日期 2007.04.06
申请人 SUMCO CORP 发明人 HAMADA KEN;INAMI SHUICHI;TAKASE NOBUMITSU;YOTSUI TAKUYA
分类号 C30B15/00 主分类号 C30B15/00
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