| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to enhance capacitance by implementing lower electrodes to surround sidewalls of first and second storage node contacts or a bottom surface and a sidewall of the second storage node contact. A semiconductor substrate(100) includes first and second landing plugs. A bit line is formed to contact with the first landing plug. An interlayer dielectric(104) is formed on the semiconductor substrate to cover the bit line. An etch stopping film(112) is formed on the interlayer dielectric. A first storage node contact(118) having a height higher than the etch stop layer is contacted with a second landing plug. The second landing plug(122) is formed on the first landing plug. A conductive film(124) is formed on a side of the second storage node contact and a side of the first storage node contact disposed on the etch stop film. A cylinder type capacitor includes a lower electrode(126) formed on the second node contact, a dielectric film(128) formed on the lower electrode and the conductive film, and an upper electrode(134) formed on the dielectric film.
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