| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the yield in the manufacturing of the channel of a carbon nanotube field-effect transistor. <P>SOLUTION: An aminoalkyl alkoxy silane layer in a sol-gel state is formed on portions where a source electrode and a drain electrode are to be formed on a substrate. A fluid dispersion of a carbon nanotube is provided on the substrate, and the carbon nanotube is selectively bound to the aminoalkyl alkoxy silane layer formed in the sol-gel state on the substrate. The aminoalkyl alkoxy silane layer in the sol-gel state is swept away by blowing nitrogen gas so that the carbon nanotube is caused to bridge the portion where the source electrode is to be formed, and the portion where the drain electrode is scheduled to be formed. The source electrode is formed on the portion where the source electrode is scheduled to be formed on the substrate, and the drain electrode is formed on the portion where the drain electrode is scheduled to be formed on the substrate. <P>COPYRIGHT: (C)2009,JPO&INPIT |
