SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a small semiconductor memory device by reducing the size of a cell transistor by reducing switching current. SOLUTION: A semiconductor memory device having a memory cell array containing a plurality of magnetoresistive elements R01 and a plurality of switching elements comprises a digit line DL00 or the like. The plurality of magnetoresistive elements are connected to a source line SL00 and a bit line BL00 arranged substantially in parallel with each other. Data are written in the magnetoresistive element by an STT (Spin Torque Transfer) writing method. The plurality of switching elements are connected to the plurality of magnetoresistive elements in series, respectively. The plurality of switching elements are controlled by a word line WL4n arranged substantially vertically relative to the source line and the bit line. A digit line is adjacent to the magnetoresistive element so that a predetermined magnetic field is generated relative to the magnetoresistive element. The digit line is arranged substantially in parallel with the source line. COPYRIGHT: (C)2009,JPO&INPIT