| 摘要 |
PROBLEM TO BE SOLVED: To provide a feedback method of a formation process of magnetoresistive element for carrying out feedback of the formation process of magnetoresistive element more appropriately based on the electric resistance (RA), by restricting variations in production lots of the electric resistance (RA). SOLUTION: After the magnetoresistive element is formed on a wafer, electric resistance (RA) and interlayer coupling magnetic field (Hin) of the magnetoresistive element are measured. If the measured value of the electric resistance and the measured value of the interlayer coupling magnetic field are both out of ranges of each predetermined specific value, the formation method is adjusted for a magnetoresistive element belonging to a production lot after the production lot, to which the wafer belongs. COPYRIGHT: (C)2009,JPO&INPIT
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