| 摘要 |
PROBLEM TO BE SOLVED: To not only easily and reliably form a catalyst material of a simplified structure to be in uniform and high density condition but also grow a linear structure composed of a high density carbon whose diameter is controlled. SOLUTION: A method of manufacturing substrate structure includes the steps of forming a TiN thin film 12 on a silicon substrate 11, accumulating a Co particulate 13 and Ni particulate 14 both of which are mixed on the TiN thin film 12, and sequentially growing CNT 15 and 16 from the Co particulate 13 and Ni particulate 14 by changing the growth condition. COPYRIGHT: (C)2009,JPO&INPIT |
