发明名称 Integrated circuits and interconnect structure for integrated circuits
摘要 An integrated circuit includes N plane-like metal layers. A first plane-like metal layer includes M contact portions that communicate with respective ones of the N plane-like metal layers, where M is an integer greater than one, wherein the first plane-like metal layer and the N plane-like metal layers are located in separate planes. A first drain region has a generally rectangular shape. First, second, third and fourth source regions have a generally rectangular shape and that are arranged adjacent to sides of the first drain region. The first drain region and the first, second, third and fourth source regions communicate with at least two of the N plane-like metal layers. A first gate region is arranged between the first, second, third and fourth source regions and the first drain region. First, second, third and fourth substrate contact regions are arranged adjacent to corners of the first drain region.
申请公布号 US2008258240(A1) 申请公布日期 2008.10.23
申请号 US20080156219 申请日期 2008.05.30
申请人 发明人 SUTARDJA SEHAT
分类号 H01L23/528;H01L21/60 主分类号 H01L23/528
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