| 摘要 |
<p>Zirconium, hafnium, titanium and silicon precursors useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of corresponding zirconium-containing, hafnium- containing, titanium-containing and silicon-containing films, respectively. The disclosed precursors achieve highly conformal deposited films characterized by minimal carbon incorporation.</p> |
| 申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC.;XU, CHONGYING;ROEDER, JEFFREY, F.;CHEN, TIANNIU;HENDRIX, BRYAN, C.;BENAC, BRIAN;CAMERON, THOMAS, M.;PETERS, DAVID, W.;STAUF, GREGORY, T.;MAYLOTT, LEAH |
发明人 |
XU, CHONGYING;ROEDER, JEFFREY, F.;CHEN, TIANNIU;HENDRIX, BRYAN, C.;BENAC, BRIAN;CAMERON, THOMAS, M.;PETERS, DAVID, W.;STAUF, GREGORY, T.;MAYLOTT, LEAH |
