发明名称 |
Transistor, fabricating method thereof and flat panel display |
摘要 |
<p>A method of fabricating a transistor, the said method comprising: preparing a substrate; forming an amorphous silicon layer on the substrate; forming a capping layer on the amorphous silicon layer; forming a metal catalyst layer on the capping layer; performing a first annealing process to crystallize amorphous silicon of the amorphous silicon layer into first annealed polycrystalline silicon using an SGS (Super Grain Silicon) crystallization method wherein metal catalysts of the metal catalyst layer diffuse as far as the amorphous silicon by penetrating through the capping layer; removing the metal catalyst layer and the capping layer; and performing a second annealing process wherein the metal catalyst crystallizes the amorphous silicon into second annealed polycrystalline silicon using a SGS crystallization method to form a polycrystalline silicon layer.
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申请公布号 |
EP1953810(A3) |
申请公布日期 |
2008.10.22 |
申请号 |
EP20070255087 |
申请日期 |
2007.12.31 |
申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
PARK, BYOUNG-KEON;YANG, TAE-HOON;SEO, JIN-WOOK;JUNG, SEIHWAN;LEE, KI-YONG;LISACHENKO, MAXIM |
分类号 |
H01L21/336;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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