| 摘要 |
Provided are a thin film transistor capable of enhancing electrical and leakage current characteristics by reducing an amount of crystallization inducing metal remaining in a semiconductor layer, a method of fabricating the same, and an organic light emitting diode display device including the same. The method of the thin film transistor of the present invention includes forming a first amorphous silicon layer (120) on a substrate (100), crystallizing the first amorphous silicon layer (120) into a first polycrystalline silicon layer (160) by using a crystallization inducing metal (140b), forming a second amorphous silicon layer (170) on the first polycrystalline silicon layer (160), implanting an impurity (175) into the second amorphous silicon layer (170), and annealing the first polycrystalline silicon layer (160) and the second amorphous silicon layer (170). The crystallization inducing metal (140b) in the first polycrystalline silicon layer (160) is transferred into the second amorphous silicon layer (170), and the second amorphous silicon layer (170) is crystallized into a second polycrystalline silicon layer. |
