| 摘要 |
A method for forming a semiconductor device is provided to prevent reduction of an aligned margin between a metal wire contact plug and a bit line due to spreading of a lower line wide of the metal wire contact plug by using a second nitride layer and an oxide layer of a three layer structure with the first nitride layer/oxide layer/second nitride layer as a hard mask pattern defining a lower shape of the metal wire contact plug. A method for forming a semiconductor device includes the steps of: forming a first interlayer insulation layer(150) on a semiconductor substrate(100); sequentially forming a first nitride layer, an oxide layer, and a second nitride layer on the first interlayer insulation layer; etching the second nitride layer and the oxide layer to form a second nitride layer pattern(215) and an oxide layer pattern(205) exposing the first nitride layer of a metal wire contact plug formation region; forming a second interlayer insulation layer(180) on the structure; etching the second interlayer insulation layer of the metal wire contact plug formation region; etching the first nitride layer and the first interlayer insulation layer to form a metal wire contact hole exposing a conductive pattern; and burying a plug material in the metal wire contact hole to form a metal wire contact plug.
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