| 摘要 |
A semiconductor storage device (10) is provided with a memory array (100) having an EEPROM array (101) and a mask ROM array (102). In the leading three addresses of the EEPROM array (101), identification information for identifying each semiconductor storage device is stored. In the 9th address to the 16th address of the EEPROM array (101), 8 bit data relating to ink quantity is stored. The 17th address to the 24th address of the EEPROM array (101) are provided with a use history information storing area. In the use history information storing area, rewritable 8 bit use history information is stored under certain conditions.
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