发明名称 |
Silicon epitaxial wafer manufacturing method and a silicon epitaxial wafer manufactured accordingly |
摘要 |
<p>There is provided a method for manufacturing a silicon wafer or a silicon epitaxial wafer capable of imparting an excellent IG capability thereto in a stable manner by simultaneously realizing higher density of oxide precipitates and larger sizes thereof at a stage prior to a device fabrication process. The present invention is a method for manufacturing a silicon wafer wherein the silicon wafer is subjected to heat treatment to impart a gettering capability thereto comprising at least the following three steps of: a temperature raising step A for generating oxygen precipitation nuclei; a temperature raising step B for growing the oxygen precipitation nuclei; and a constant temperature keeping step C for growing the oxygen precipitation nuclei into oxide precipitates of larger sizes.</p> |
申请公布号 |
EP1983561(A2) |
申请公布日期 |
2008.10.22 |
申请号 |
EP20080013793 |
申请日期 |
2002.05.23 |
申请人 |
SHIN-ETSU HANDOTAI COMPANY LIMITED |
发明人 |
TAKENO, HIROSHI |
分类号 |
H01L21/322 |
主分类号 |
H01L21/322 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|