发明名称 |
Method for manufacturing pyrolytic boron nitride composite substrate |
摘要 |
Wettability of a PBN material surface with respect to a metal is improved to expand use applications. Hydrogen ions are implanted into a surface of a silicon substrate 10 to form an ion implanted region 11 at a predetermined depth near a surface of the silicon substrate 10, and a plasma treatment or an ozone treatment is performed with respect to a main surface of the silicon substrate 10 for the purpose of surface cleaning or surface activation. The main surfaces of the silicon substrate 10 and a PBN substrate 20 subjected to the surface treatment are appressed against each other to be bonded at a room temperature, and an external impact shock is given to the bonded substrate to mechanically delaminate a silicon film 12 from a bulk 13 of the silicon substrate to be transferred. An obtained PBN composite substrate 30 is diced to form a chip having a desired size, and a refractory metal is metallized on the silicon film 12 side to be connected with a wiring material.
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申请公布号 |
EP1983071(A1) |
申请公布日期 |
2008.10.22 |
申请号 |
EP20080006094 |
申请日期 |
2008.03.28 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
KAWAI, MAKOTO;KUBOTA, YOSHIHIRO;ATSUO, ITO;TANAKA, KOICHI;TOBISAKA, YUUJI;AKIYAMA, SHOJI |
分类号 |
C23C14/06;H01L21/20;H01L21/762 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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