| 摘要 |
A thin film deposition apparatus is provided to prevent crack in a wafer support surface by thermally expanding the wafer support surface differently from each other. A thin film deposition apparatus includes a reactor(10), a susceptor(20), a shower head(40), and a heater(50). The reactor has an inner space(11). The susceptor is installed in the inner space of the reactor. The susceptor has a wafer support surface on which a wafer is disposed. A heating element(30) is installed in the susceptor and heats the wafer disposed on the wafer support surface. The shower head injects a source gas to the wafer to form a thin film on the wafer disposed on the wafer support surface. The heater is installed in the inner space of the reactor to enclose the wafer. The heater heats an edge of the wafer. The heater has a hollow shape and the wafer support surface is disposed inside the heater.
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