Memory cell programmed using current from access device
摘要
<p>A memory includes a phase change element having a first side and a second side and a first line coupled to the first side of the element. The memory includes an access device coupled to the second side of the element and a second line coupled to the access device for controlling the access device. The memory includes a circuit for precharging the first line to a first voltage and for applying a voltage pulse to the second line such that a current pulse is generated through the access device to the element to program the element to a selected one of more than two states. The voltage pulse has an amplitude based on the selected state.
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申请公布号
EP1865512(A3)
申请公布日期
2008.10.22
申请号
EP20070011153
申请日期
2007.06.06
申请人
QIMONDA NORTH AMERICA CORP.;MACRONIX INTERNATIONAL CO., LTD.
发明人
HAPP, THOMAS, DR.;PHILIPP, JAN BORIS;LEE, MING-HSIU