| 摘要 |
<p>A method for forming a gate oxide layer of a semiconductor device is provided to obtain a desired threshold voltage in both of an NMOS region and a PMOS region by forming a gate oxide layer of the NMOS region including only nitrogen ions and a gate oxide layer of the PMOS region including the nitrogen ions and fluoric ions. A gate oxide layer(13b,13c,13d) is formed on a substrate including a first region and a second region. A first ion implantation process is performed to implant first ions only onto the gate oxide layer of the first region of the substrate including the gate oxide layer. A second ion implantation process is performed to implant second ions only onto the gate oxide layer of the second region of the substrate onto which the first ions are implanted. A plasma process using nitrogen ions for the gate oxide layer including the first and second ions is performed.</p> |
