METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to improve the reliability in a formation process of a device isolation layer and characteristics and the reliability of the semiconductor device. A method for manufacturing a semiconductor device includes the steps of: forming a pad pattern with a pad oxide layer(111) and a pad nitride layer defining a device isolation region on a semiconductor substrate(100) divided into a chip region and an edge region; etching the semiconductor substrate by using the pad pattern as a mask to form a trench; forming a sacrifice oxide layer(130) on an entire surface of a resultant object on which the trench is formed; selectively removing the sacrifice oxide layer of the edge region; and removing the sacrifice oxide layer of the chip region.