| 摘要 |
A method for cleaning a semiconductor device is provided to remove contaminants attached on a surface of a substrate by injecting a cleaning solution including a chemical material of a mist state onto the surface of the substrate. A cleaning solution supply process is performed to supply a cleaning solution including chemical materials from a first supply unit(S100). A pressing process is performed to press the cleaning solution by using gas received from a second supply unit(S110). The pressed cleaning solution is changed into a mist state thereof(S120). The cleaning solution of the mist state is supplied to the surface of the substrate in order to remove contaminants attached on a surface of a substrate by a physical and chemical method(S130). The cleaning solution is an APM(Ammonium Peroxide Mixture) solution, an HF solution, an O3 solution or ammonia solution.
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