METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING LANDING PAD

摘要

A method for forming a semiconductor device having landing pads is provided to maximize efficiency in mass production by patterning an interlayer insulation layer to expose source/drain regions and forming landing pads on the exposed source/drain regions. A method for forming a semiconductor device having landing pads comprises the following steps of: providing a semiconductor substrate(51) including a buried gate electrode(57), a capping pattern for covering the buried gate electrode and source/drain regions(61,62) formed in both sides of the buried gate electrode; forming an interlayer insulation layer for covering the semiconductor substrate; patterning the interlayer insulation layer to form a groove at an upper portion of the buried gate electrode; forming an insulation pattern(67) for filling the groove; patterning the interlayer insulation layer at both sides of the insulation pattern to expose the source/drain regions; and forming landing pads on the exposed source/drain regions.