| 摘要 |
<p>A mask and a manufacturing method thereof is provided to obtain a target critical dimension(CD) of an isolated pattern only with a proper amount of optical proximity correction(OPC), and to obtain a processing margin, particularly, a depth of focus(DOF) margin by forming an assist feature around the isolated pattern using a chromeless mask(CLM) technique. A mask includes a mask substrate(10), an isolated pattern formed on an upper portion of the mask substrate, and at least one assist feature which is formed by etching the mask substrate so as to have a predetermine depth as being distanced away from the isolated pattern.</p> |
