发明名称 SEMICONDUCTOR DEVICE
摘要 <p>A semiconductor device is provided to alleviate a mechanical stress applied to a boding pad by the structure of a columnar interlayer insulation layer and a conductive layer. A semiconductor device includes a semiconductor layer(1), a wire layer(3), an interlayer insulation layer(6), a conductive layer(7) and an uppermost wire layer(15). The wire layer is formed on a surface of the semiconductor substrate. The interlayer insulation layer is formed to coat the wire layer. The conductive layer is formed in the interlayer insulation layer to be electrically connected with the wire layer. The uppermost wire layer is formed above the interlayer insulation layer to be electrically connected with the wire layer through the conductive layer. A plurality of columnar interlayer insulation layers are formed in a honeycomb pattern. The conductive layer is formed to enclose the columnar interlayer insulation layer.</p>
申请公布号 KR20080090304(A) 申请公布日期 2008.10.08
申请号 KR20080030277 申请日期 2008.04.01
申请人 SANYO ELECTRIC CO., LTD.;SANYO SEMICONDUCTOR COMPANY LIMITED 发明人 MORIKAWA SHIGEHIRO;INABA YUICHI;GOTO YUJI
分类号 H01L21/3205 主分类号 H01L21/3205
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