| 摘要 |
PROBLEM TO BE SOLVED: To realize a light emitting element having an excellent light emitting efficiency in a short wavelength region of 380 nm. SOLUTION: The nitride semiconductor element comprises an active layer 12 between a first conductivity type layer and a second conductivity type layer. The layer 12 has a quantum well structure having at least a well layer 1 made of a nitride semiconductor containing In and Al, and a barrier layer 2 made of a nitride semiconductor containing Al, thereby obtaining the laser element having excellent light emitting efficiency in the short wavelength region. It is particularly preferred when the well layer 1 is made of Alx Iny Ga1-x-y N (0<x<=1, 0<y<=1, and x+y<1), and the barrier layer 2 particularly preferably contains Alu Inv Ga1-u-v N (0<u<=1, 0<=v<=1, u+v<1). |
