发明名称 Circuitry and method for reducing second and third-order nonlinearities
摘要 An electronic circuit (10) comprises at least two transistors (T12, T14) coupled in parallel. The first transistor (T12) is biased with a first gate-source voltage and a first drain-source voltage. The second transistor (T14) is biased with a second gate-source voltage and a second drain-source voltage. The first gate-source voltage and the second gate-source voltage are offset from each other by a gate-source voltage offset and the first drain-source voltage and the second drain-source voltage are offset from each other by a drain-source voltage offset. These bias conditions result in the transistors (T12, T14) operating in different regions so that the second and third-order nonlinearities of the transistors (T12, T14) substantially cancel each other out simultaneously.
申请公布号 EP1978635(A1) 申请公布日期 2008.10.08
申请号 EP20070105605 申请日期 2007.04.04
申请人 TELEFONAKTIEBOLAGET LM ERICSSON (PUBL) 发明人 ARNBORG, TORKEL
分类号 H03F3/195;H03F1/32;H03F3/21 主分类号 H03F3/195
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