发明名称 |
METHOD FOR FORMING THIN FILM AND BASE HAVING THIN FILM FORMED BY SUCH METHOD |
摘要 |
<p>A method for forming a film comprising a first process and a second process, the first process comprising the steps of: supplying a discharge gas to a first discharge space where high frequency electric field A is generated at or near atmospheric pressure, whereby the discharge gas is excite; transferring energy of the excited discharge gas to a film forming gas, whereby the film forming gas is excited; and exposing a substrate to the film forming gas to form a film on the substrate, and
the second process comprising the steps of: supplying a gas containing an oxidizing gas to a second discharge space where high frequency electric field B is generated at or near atmospheric pressure, whereby the gas containing the oxidizing gas is excite; and the film formed in the first process is exposed to the excited gas containing the oxidizing gas.</p> |
申请公布号 |
EP1645657(A4) |
申请公布日期 |
2008.10.08 |
申请号 |
EP20040747551 |
申请日期 |
2004.07.08 |
申请人 |
KONICA MINOLTA HOLDINGS, INC. |
发明人 |
II, HIROMOTO;TSUJI, TOSHIO;MAMIYA, CHIKAO;FUKUDA, KAZUHIRO;OISHI, KIYOSHI;KIYOMURA, TAKAKAZU |
分类号 |
C23C16/44;C23C16/08;C23C16/18;C23C16/40;C23C16/455;C23C16/505;C23C16/517;C23C16/56;H01B13/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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