| 摘要 |
A semiconductor memory device and an operation method thereof are provided to precharge a local input/output line to a stable voltage level more rapidly. A write driver(510) loads data applied to a first data line onto a second data line. A first precharging unit(530) precharges the second data line in response to a precharging signal. A second precharging unit(550) over-drives the second data line to a voltage higher than a precharging voltage in response to an over-driving signal enabled for a predetermined time in the initial stage of a precharging period of the second data line. A signal generation unit(570) generates the precharging signal and the over-driving signal in response to a reset signal.
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