发明名称 Frequency-doubled edge-emitting semiconductor lasers
摘要 A frequency-doubled, edge-emitting semiconductor laser includes a separate confinement heterostructure surmounted by a waveguide including a converting layer of a periodically poled, optically nonlinear material. Fundamental radiation generated in the heterostructure is directionally coupled from the heterostructure into the waveguide, is converted to second-harmonic radiation in the converting layer and is delivered from the waveguide as output radiation. In one example, a distributed Bragg grating is included at an interface between the heterostructure and the waveguide for facilitating coupling of fundamental radiation from the heterostructure into the waveguide.
申请公布号 US7433374(B2) 申请公布日期 2008.10.07
申请号 US20060643114 申请日期 2006.12.21
申请人 COHERENT, INC. 发明人 GOVORKOV SERGEI V.;AUSTIN R. RUSSEL
分类号 H01S3/10 主分类号 H01S3/10
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