发明名称 InP based long wavelength VCSEL
摘要 A long wavelength vertical cavity surface emitting laser having a substrate, a first mirror situated on the substrate, an active region situated on the first mirror, a second mirror situated on the active region. The first mirror may have several pairs of layers with an oxidized layer in one or more pairs of that mirror. The substrate may include InP and the mirror components may be compatible with the InP. The one or more layers in the first mirror may be oxidized via a trench-like approach or other arrangement.
申请公布号 US7433381(B2) 申请公布日期 2008.10.07
申请号 US20030606104 申请日期 2003.06.25
申请人 FINISAR CORPORATION 发明人 WANG TZU-YU;KWON HOKI;RYOU JAE-HYUN;PARK GYOUNGWON;KIM JIN K.
分类号 H01S5/00;H01S3/08;H01S5/183;H01S5/20;H01S5/343 主分类号 H01S5/00
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